?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 12
Publication Order Number:
BAT54ALT1/D
1
BAT54ALT1G,
BAT54ALT3G,
SBAT54ALT1G,
SBAT54ALT3G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
?
Extremely Fast Switching Speed
?
Low Forward Voltage ?
0.35 V (Typ) @ I
F
= 10 mAdc
?
AEC Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(TJ
= 125
?C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA
= 25
?C
Derate above 25?C
PF
225
1.8
mW
mW/?C
Forward Current (DC)
IF
200 Max
mA
Non?Repetitive Peak Forward Current
tp
< 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM
300
mA
Junction Temperature
TJ
?55 to 150
?C
Storage Temperature Range
Tstg
?55 to +150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
Device Package Shipping?
ORDERING INFORMATION
SOT?23 (TO?236)
CASE 318
STYLE 12
MARKING DIAGRAM
ANODE
3
CATHODE
1
2
CATHODE
http://onsemi.com
BAT54ALT1G SOT?23
(Pb?Free)
3,000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
B6M
B6 = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BAT54ALT3G SOT?23
(Pb?Free)
10,000/Tape & Reel
SBAT54ALT1G SOT?23
(Pb?Free)
3,000/Tape & Reel
SBAT54ALT3G SOT?23
(Pb?Free)
10,000/Tape & Reel
相关PDF资料
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相关代理商/技术参数
BAT54ALT1G 制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER CMN ANODE 0.2A SOT-23
BAT54ALT1G_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diodes
BAT54ALT1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
BAT54ALT3 功能描述:肖特基二极管与整流器 30V 225mW Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
BAT54ALT3G 功能描述:肖特基二极管与整流器 30V 225mW Dual Common Anode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
BAT54AN3 制造商:CYSTEKEC 制造商全称:Cystech Electonics Corp. 功能描述:Small Signal Schottky (double) diodes
BAT54AP6FILM 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Small signal Schottky diodes
BAT54APBF 功能描述:肖特基二极管与整流器 0.2 Amp 30 Volt Dual Common Anode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel